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IXTH160N075T
IXTQ160N075T
75
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
80
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
R G = 5 Ω
65
V GS = 10V
70
60
55
50
45
40
I D = 50A
V DS = 38V
60
50
40
R G = 5 Ω
V GS = 10V
V DS = 38V
T J = 25oC
35
30
I D = 25A
30
25
20
15
20
10
T J = 125oC
25
35
45
55
65
75
85
95
105
115
125
25
30
35
40
45
50
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
100
42
62
85
90
t r
t d(on) - - - -
40
60
82
80
70
T J = 125oC, V GS = 10V
V DS = 38V
I D = 25A
38
36
58
56
t f t d(off) - - - -
R G = 5 Ω , V GS = 10V
79
76
60
I D = 50A
34
54
52
V DS = 38V
I D = 25A
73
70
50
32
50
67
40
30
20
10
30
28
26
24
48
46
44
42
I D = 50A
64
61
58
55
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
62
90
130
230
60
T J = 125oC
86
120
t f
t d(off) - - - -
210
58
82
110
T J = 125oC, V GS = 10V
V DS = 38V
190
56
54
t f t d(off) - - - -
R G = 5 Ω , V GS = 10V
V DS = 38V
T J = 25oC
78
74
100
90
I D = 25A
170
150
52
70
50
66
80
I D = 50A
130
48
46
44
42
T J = 25oC
T J = 125oC
62
58
54
50
70
60
50
40
110
90
70
50
25
30
35
40
45
50
4
6
8
10
12
14
16
18
20
I D - Amperes
? 2006 IXYS CORPORATION All rights reserved
R G - Ohms
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功能描述:MOSFET 160Amps 150V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH16N10D2
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IXTH16N20D2
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IXTH16N50D2
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IXTH16P20
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IXTH17N55
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17A I(D) | TO-218VAR
